features power dissipation marking : C1815=hf maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 15 0 t stg storage temperature -55-15 0 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100ua, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 50 v collector cut-off current i ceo v ce =50v, i b =0 0.1 ua emitter cut-off current i ebo v eb = 5v, i c =0 0.1 ua dc current gain h fe v ce = 6v, i c = 2ma 130 400 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.25 v base-emitter saturation voltage v be (sat) i c =100ma, i b = 10ma 1 v transition frequency f t v ce =10v, i c = 1ma, f=30mhz 80 mhz classification of h fe rank l h range 130-200 200-400 sot-23 1. base 2. emitter 3. collector collector cut-off current i c b o v c b = 6 0v, i e =0 0.1 ua C1815 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics v ce ( sat ) /v be ( sat ) -i c f t -ic C1815 2 date:2011/05 www.htsemi.com semiconductor jinyu
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